Điện tử_ Chapter 12

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Điện tử_ Chapter 12

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  1. Chapter 12 Field-Effect Transistors ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  2. Chapter 12 Field­Effect  Transistors  1. Understand MOSFET operation. 2. Analyze basic FET amplifiers using the load-line technique. 3. Analyze bias circuits. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  3. 4. Use small-signal equivalent circuits to analyze FET amplifiers. 5. Compute the performance parameters of several FET amplifier configurations. 6. Select a FET amplifier configuration that is appropriate for a given application. 7. Understand the basic operation of ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  4. NMOS AND PMOS TRANSISTORS ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  5. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  6. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  7. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  8. Operation in the  Cutoff Region iD = 0 for vGS ≤ Vto ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  9. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  10. Operation in the  Triode Region [ iD = K 2( vGS − vto ) v DS − v 2 DS ] W  KP K =  L  2 ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  11. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  12. Operation in the  Saturation Region iD = K ( vGS − vto ) 2 iD = Kv 2 DS ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  13. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  14. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  15. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  16. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  17. MOSFET Summary ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  18. LOAD­LINE ANALYSIS OF A  SIMPLE NMOS AMPLIFIER v DD = RD iD ( t ) + v DS ( t ) ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  19. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
  20. ELECTRICAL ENGINEERING: PRINCIPLES AND APPLICATIONS, Third Edition, by Allan R. Hambley, ©2005 Pearson Education, Inc.
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