Bipolar devices

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  • Chapter 5: Bipolar Junction Transistor's Goals is Explore the physical structure of bipolar transistor, Study terminal characteristics of BJT, Explore differences between npn and pnp transistors, Develop the Transport Model for bipolar devices.

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  • Since the mid-20th Century the electronics industry has enjoyed phenomenal growth and is now the largest industry in the world. The foundation of the electronics industry is the semiconductor device. To meet the tremendous demand of this industry, the semiconductor-device field has also grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified.

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  • The field of microelectronics began in 1948 when the first transistor was invented. This first transistor was a point-contact transistor, which became obsolete in the 1950s following the development of the bipolar junction transistor (BJT). The first modernday junction field-effect transistor (JFET) was proposed by Shockley (1952). These two types of electronic devices are at the heart of all microelectronic components, but it was the development of integrated circuits (ICs) in 1958 that spawned today's computer industry...

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  • A review of silicon properties is important to understanding silicon components, in particular modern components such as strained-silicon MOSFETs and heterojunction bipolar transistors. Several books cover this subject in detail. The objective of this chapter is to highlight those features that are most important to silicon device operation and characteristics.

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  • (BQ) Part 1 book "Electronic devices and circuit theory" has contents: Semiconductor diodes, diode applications, bipolar junction transistors, field effect transistors, FET biasing, BJT transistor modeling,...and other contents.

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  • This third volume of the book series Lessons In Electric Circuits makes a departure from the former two in that the transition between electric circuits and electronic circuits is formally crossed. Electric circuits are connections of conductive wires and other devices whereby the uniform ow of electrons occurs. Electronic circuits add a new dimension to electric circuits in that some means of control is exerted over the ow of electrons by another electrical signal, either a voltage or a current....

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  • With technology advancements in semiconductor devices such as insulated gate bipolar transistors (IGBTs) and gate commutated thyristors (GCTs), modern highpower medium voltage (MV) drives are increasingly used in petrochemical, mining, steel and metals, transportation and other industries to conserve electric energy, increase productivity and improve product quality. Although research and development of the medium voltage (2.3 KV to 13.8 KV) drive in the 1-MW to 100-MW range are continuously growing, books dedicated to this technology seem unavailable.

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  • Electronics is a science about the devices and processes that use electromagnetic energy conversion to transfer, process, and store energy, signals and data in energy, control, and computer systems. This science plays an important role in the world progress.

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  • The field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the rapid rise of the bipolar device it was not pursued until the early 1960Õs as a viable semiconductor alternative. At this time further investigation of the field effect transistor and advances in semiconductor process technology lead to the types in use today.

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  • The properties and performance of analog biCMOS integrated circuits are dependent on the devices used to construct them. This chapter is a review of the operation of silicon devices. It begins with a discussion of conductivity and resistance. Simple physical models for bipolar transistors, MOS transistors, and junction and diffusion capacitance are developed.

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  • Back in the days when I had a lot more energy and a lot less sense, I wrote the first edition of this book. I had just finished writing Microwave Mixers, and friends kept asking me, “Well, are you going to write another one?” Sales of Mixers were brisk, and the feedback from readers was encouraging, so it was easy to answer, “Sure, why not?” After a year of painful labor, Nonlinear Microwave Circuits was born.

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  • Chương này gồm có những nội dung chính sau: Diodes, bipolar junction transistor (BJT), metal oxide semiconductor effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), thyristor, gate turn of thyrisor (GTO), triode alternative current (TRIAC). Mời tham khảo.

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  • To learn the physics, characteristics, applications, analysis, and design of circuits using bipolar and field-effect transistors with an emphasis on small-signal behavior and analog circuits. To understand and apply the principles of device modeling to circuit analysis and design. To gain hands-on experience with laboratory instrumentation and analog circuit troubleshooting. Learning Objectives: 1. Calculate model parameters for bipolar and FET devices in PSPICE.

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  • Lecture "Radio Communication Circuits: Chapter 3 & 4" presents the following contents: Low Noise Amplifier (LNA), Noise in Bipolar Transistors, Frequency Conversion Circuits (Mixers). Invite you to consult.

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  • (BQ) Part 1 book "Analysis and design of analog integrated circuits" has contents: Models for integrated circuit active devices; bipolar, mos, and bicmos integrated circuit technology; single transistor and multiple transistor amplifiers; current mirrors, active loads, and references; output stages.

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  • Equivalent circuit device models are critical for the accurate design and modelling of RF components including transistors, diodes, resistors, capacitors and inductors. This chapter will begin with the bipolar transistor starting with the basic T and then the π model at low frequencies and then show how this can be extended for use at high frequencies. These models should be as simple as possible to enable a clear understanding of the operation of the circuit and allow easy analysis. They should then be extendible to include the parasitic components to enable accurate optimisation....

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  • Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate Turn-Off Thyristors • Insulated Gate Bipolar Transistors • Gate-Commutated Thyristors and Other Hard-Driven GTOs • Comparison Testing of Switches © 2002 by CRC Press LLC .1 Power Electronics Kaushik Rajashekara Delphi Automotive Systems 1.

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  • Rajashekara, K., Bhat, A.K.S., Bose, B.K. “Power Electronics” The Electrical Engineering Handbook Ed. Richard C. Dorf Boca Raton: CRC Press LLC, 2000 .30 Power Electronics 30.1 Power Semiconductor Devices Thyristor and Triac • Gate Turn-Off Thyristor (GTO) • ReverseConducting Thyristor (RCT) and Asymmetrical Silicon- Controlled Rectifier (ASCR) • Power Transistor • Power MOSFET • Insulated-Gate Bipolar Transistor (IGBT) • MOS Controlled Thyristor (MCT) Kaushik Rajashekara Delphi Energy & Engine Management Systems 30.2 30.3 30.

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  • TRANSISTOR AMPLIFIER DESIGN Ampli®ers are among the basic building blocks of an electronic system. While vacuum tube devices are still used in high-power microwave circuits, transistorsÐ silicon bipolar junction devices, GaAs MESFET, heterojunction bipolar transistors (HBT), and high-electron mobility transistors (HEMT)Ðare common in many RF and microwave designs. This chapter begins with the stability considerations for a two-port network and the formulation of relevant conditions in terms of its scattering parameters....

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  • The preferred profile to achieve a good compromise between a too high field at the base-collector junction and suppression of the Kirk effect at high current densities is obtained by a retrograde collector profile [30]. For this profile the SIC implantation energy is chosen to obtain a low impurity concentration near the base-collector junction and then increasing toward the subcollector.

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