Xem 1-17 trên 17 kết quả Diode characteristics
  • Organic light emitting diodes (OLEDs) have attracted enormous attention in the recent years because of their potential for flat panel displays and solid state lighting. This potential lies in the amazing flexibility offered by the synthesis of new organic compounds and by low-cost fabrication techniques, making these devices very promising for the market.

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  • Introduction to LEDs: How LEDs work + some points. Comparison with other sources of light. LED in communication. Blue &White LED technologies. How they are made? Their application? Brief about blue laser? Stands for light emitting diode. Semiconductor device: p-n junction forward-biased.current emits incoherent narrow spectrum light (due to recombination in transition region near the junction.) Color of the emitted light depends on the chemical of the semiconducting material used. (Near-ultraviolet, visible or infrared.)...

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  • VOLTAGE REGULATION A voltage regulator circuit automatically maintains the output voltage of a power supply constant, regardless of - a change in the load - a change in the source voltage ZENER DIODES The simplest of all voltage regulators is the zener diode voltage regulator. A zener diode is a special diode that p is optimized for operation in the g breakdown region. ZENER DIODE CIRCUIT The zener diode is typically connected reverse biased, in parallel with the load. Resistor Rs limits current to zener.

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  • Semiconductor Diodes • A diode is a very useful non-linear device • It allows current to flow in one direction and prevents it flowing in the other Anode Cathode I Diode Operation • When a positive voltage is applied across the diode then current will flow • The diode is said to be forward biased • When a negative voltage is applied then the diode is reverse biased and no current will flow Diode Characteristic Curve Forward Biased Diode • A positive voltage is applied to circuit so current will flow • Diode effectively behaves like a short circuit when forward biased...

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  • Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate Turn-Off Thyristors • Insulated Gate Bipolar Transistors • Gate-Commutated Thyristors and Other Hard-Driven GTOs • Comparison Testing of Switches © 2002 by CRC Press LLC .1 Power Electronics Kaushik Rajashekara Delphi Automotive Systems 1.

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  • In this chapter, the characteristics of diodes are presented. Diode circuit analysis techniques will be discussed. Problems involving diode circuits are solved using MATLAB. 9.1 DIODE CHARACTERISTICS Diode is a two-terminal device. The electronic symbol of a diode is shown in Figure 9.1(a). Ideally, the diode conducts current in one direction. The current versus voltage characteristics of an ideal diode are shown in Figure 9.1(b). anode i cathode (a) i v (b) Figure 9.

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  • Discovered almost fifty years ago at Bell Labs (1964), the Nd:YAG laser has undergone an enormous evolution in the years, being now widely used in both basic research and technological applications. Nd:YAG laser is extremely versatile in its output characteristics, yielding emission from continuous wave to very large energy pulses or very high peak-power pulses. Also, it covers a large spectral range, namely near infrared, visible (second harmonic) and ultraviolet (third to fifth harmonic).

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  • In this chapter, the characteristics of diodes are presented. Diode circuit analysis techniques will be discussed. Problems involving diode circuits are solved using MATLAB.

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  • CHAPTER NINE DIODES In this chapter, the characteristics of diodes are presented. Diode circuit analysis techniques will be discussed. Problems involving diode circuits are solved using MATLAB. 9.1 DIODE CHARACTERISTICS Diode is a two-terminal device. The electronic symbol of a diode is shown in Figure 9.1(a). Ideally, the diode conducts current in one direction. The current versus voltage characteristics of an ideal diode are shown in Figure 9.1(b). anode i cathode (a) i v (b) Figure 9.

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  • Đặc tuyến truyền: (Transfer characteristic curve) Từ đặc tuyến ngõ vào và đặc tuyến ngõ ra. Ta có thể suy ra đặc tuyến truyền của transistor. Đặc tuyến truyền biểu diễn sự thay đổi của dòng điện ngõ ra IC theo điện thế ngõ vào VBE với điện thế ngõ ra VCE làm thông số. Đặc tuyến có dạng như sau:

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  • Light sources should be as small as possible, produce light efficiently and have a long life. The demands of architects, light planners and operators of lighting installations have formed the basis of the research and development work of the lighting industry. Today more light sources with these properties are on the market than ever before in the history of artificial light. Until now, however, no filament or discharge lamp has combined all three properties. Only light emitting diodes (LEDs), also called light diodes, achieve this.

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  • Physically, diodes are formed by the interface between two regions of oppositely doped semiconductor (i.e., pn junction) and are thus, structurally, the simplest semiconductor devices used in electronics. 1. Ideal Diode An ideal diode is a two-terminal device defined by the following non-linear (currentvoltage) iv-characteristic: i "electronic check valve" "arrowhead" i "brick wall" Anode + v - Cathode Reverse Bias "RB" Forward Bias "FB" Circuit Symbol 0 Forward Biased Regime (v0): Zero voltage drop occurs across a forward-biased ideal diode (i.e.

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  • In this book, the performance characteristics of distributed feedback semiconductor laser diodes and optical tunable filters based on DFB laser structures have been investigated. As discussed in Chapter 1, these lasers can be used as optical sources and local oscillators in coherent optical communication networks, in which a stable single mode (in both the transverse plane and the longitudinal direction) and narrow spectral linewidth become crucial.

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  • In Chapter 3, eigenvalue equations were derived by matching boundary conditions inside DFB laser cavities. From the eigenvalue problem, the lasing threshold characteristic of DFB lasers is determined. The single %/2-phase-shifted (PS) DFB laser is fabricated with a phase discontinuity of %/2 at or near the centre of the laser cavity. It is characterised by Bragg oscillation and a high gain margin value. On the other hand, the SLM deteriorates quickly when the optical power of the laser diode increases.

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  • The introduction of semiconductor lasers has boosted the development of coherent optical communication systems. With the built-in wavelength selection mechanism, distributed feedback semiconductor laser diodes with a higher gain margin are superior to the Fabry– Perot laser in that a single longitudinal mode of lasing can be achieved. In this chapter, results obtained from the threshold analysis of conventional and singlephase-shifted DFB lasers will be investigated. In particular, structural impacts on the threshold characteristic will be discussed in a systematic way. ...

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  • The above-threshold lasing characteristics of DFB semiconductor laser diodes were presented in the previous chapter using a modified transfer matrix. Instead of using an averaged carrier concentration, the inclusion of the actual carrier distribution allows phenomena such as the spatial hole burning effect and non-linear gain to be included. In the analysis, a parabolic gain model and high-order carrier recombination were assumed.

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  • In the latest decade we have witnessed a tremendous advance in telecommunications technology. With the rapid growth and sophistication of digital technology and computers, communication systems have become more versatile and powerful. This has given a modern communication engineer two key problems to solve: (i) how to handle the ever-increasing demand for capacity and speed in communication systems, and (ii) how to tackle the need to integrate a wide range of computers and data sources so as to form a highly integrated communication network with a global coverage....

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