Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors
This book represents a collection of scientific articles covering the field of infrared radiation. It offers extensive information about current scientific research and engineering developments in this area. Each chapter has been thoroughly revised and each represents significant contribution to the scientific community interested in this matter.
Ray et al. Nanoscale Research Letters 2011, 6:224 http://www.nanoscalereslett.com/content/6/1/224
Structural and optical properties of germanium nanostructures on Si(100) and embedded in high-k oxides
Samit K Ray*, Samaresh Das, Raj K Singha, Santanu Manna, Achintya Dhar
Abstract The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented.
QDs play an important role mainly in the imaging and as highly fluorescent probes for
biological sensing that have better sensitivity, longer stability, good biocompatibility, and
minimum invasiveness. The fluorescent properties of QDs arise from the fact, that their
excitation states/band gaps are spatially confined, which results in physical and optical
properties intermediate between compounds and single molecules. Depending on chemical
composition and the size of the core which determines the quantum confinement, the
emission peak can vary from UV to NIR wavelengths (400–1350 nm).