Optical gain

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  • This chapter presents the basic theory and characteristics of stimulated emission and optical amplification gain in semiconductors. The former is the mostimportant principlethat enablessemiconductorlaserstobeimplemented, and the latter is the most important parameter for analysis of the laser performances. First, stimulated emission in semiconductors is explained, and then quantum theory analysis and statistic analysis using the density matrix of the optical amplification gain are given.

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  • Semiconductor lasers are among the most important optoelectronics devices. Remarkable development has been accomplished in the three decades since the first achievement in room-temperature continuous oscillation, which opened the possibility of practical applications of semiconductor lasers. Today, various types of semiconductor lasers are mass-produced and widely used as coherent light sources for a variety of applications, including optical fiber communication systems and optical disk memory systems....

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  • In Chapter 3, eigenvalue equations were derived by matching boundary conditions inside DFB laser cavities. From the eigenvalue problem, the lasing threshold characteristic of DFB lasers is determined. The single %/2-phase-shifted (PS) DFB laser is fabricated with a phase discontinuity of %/2 at or near the centre of the laser cavity. It is characterised by Bragg oscillation and a high gain margin value. On the other hand, the SLM deteriorates quickly when the optical power of the laser diode increases.

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  • The introduction of semiconductor lasers has boosted the development of coherent optical communication systems. With the built-in wavelength selection mechanism, distributed feedback semiconductor laser diodes with a higher gain margin are superior to the Fabry– Perot laser in that a single longitudinal mode of lasing can be achieved. In this chapter, results obtained from the threshold analysis of conventional and singlephase-shifted DFB lasers will be investigated. In particular, structural impacts on the threshold characteristic will be discussed in a systematic way. ...

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  • Since its first demonstration in 1960, the laser has found widespread application in diverse areas including medicine, materials processing, optical communications and information technology. The number of engineers and scientists working on lasers or in laser related fields is continuously increasing as new applications for this exciting technology are being discovered. This also means that more and more people need to gain a detailed knowledge of lasers and their characteristics.

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  • In the latest decade we have witnessed a tremendous advance in telecommunications technology. With the rapid growth and sophistication of digital technology and computers, communication systems have become more versatile and powerful. This has given a modern communication engineer two key problems to solve: (i) how to handle the ever-increasing demand for capacity and speed in communication systems, and (ii) how to tackle the need to integrate a wide range of computers and data sources so as to form a highly integrated communication network with a global coverage....

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  • As fiber-to-the-x (FTTX) architectures gain momentum as a means for delivering high-speed broadband services to homes and small businesses, many questions have surfaced regarding the best way to connect the large number of drop cables feeding into the network. Drop cables typically connect each optical network terminal (ONT) at the subscriber premise to a fiber access terminal where they are then connected to a main fiber distribution cable.

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  • The dissemination of micro-electronics during the 1980s led to innovation. On the leading edge of these technologies was the machine tool subsector. However, the Japanese were the first to apply advanced controls and gained shares in global markets propelled by their lead. Since then Europe has caught up and ME competes at eye level with Japan. 10 A detailed assessment of the technological position in this area and other fields of relevance for ME, such as nanotechnology, optics, new materials and composites, is performed in Chapter 0.

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