The VLSI Handbook P2

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The VLSI Handbook P2

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The preferred profile to achieve a good compromise between a too high field at the base-collector junction and suppression of the Kirk effect at high current densities is obtained by a retrograde collector profile [30]. For this profile the SIC implantation energy is chosen to obtain a low impurity concentration near the base-collector junction and then increasing toward the subcollector. The thickness of the epilayer exhibits large variations among different device designs, extending several micrometers in depth for analog bipolar components, whereas a high-speed digital design typically has an epilayer thickness around 1 µm or below, thus reducing the total...

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