A first principles study on electronic and magnetic properties of defects in ZnO/GaN core-shell nanowire heterostructures

In our study we focused on the effects of GaN/ZnO interfaces on the electronic and magnetic properties, e.g. interface states within the bandgap and interface-induced ferromagnetism and impact of surface reconstruction and quantum confinement. The origin of this d0 -FM is revealed by analyses of spin-polarized bandstructure indicated by the asymmetrical spin-up and spindown states near the Fermi level, the projected densities of states (PDOSs) and the spin-polarized mulliken charge differences, indicated that most spin-polarized states are dominated by the interface defect site Np electrons.