Analysis the effects of ferroelectric electric field on current-voltage characteristics of the ferroelectric field effect transistor using SrBi2Ta2O9 thin film

This paper presents a new analytical expression for current-voltage characteristics of the Ferroelectric Field Effect Transistor (FeFET), a promising candidate for nonvolatile memories. For this research, a FeFET model using Pt/SrBi2Ta2O9/Insulators/Si thin film as an effect gate stack was proposed and assessed.