Bài viết tìm hiểu việc tổng hợp dây nano silic bằng phương pháp bốc bay nhiệt, cấu trúc của chúng và sự liên quan của cấu trúc này đến việc phát huỳnh quang của dây Si đo ở nhiệt độ phòng.
Nội dung Text: Cấu trúc lỏi/võ và sự phát huỳnh quang của dây nanô silic
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Abstract
Silicon nanowires (SiNWs) were synthesized on Si (111) surfaces using the vapor liquid solid technique at
high temperature ranging from 1100 0C to 1200 0C. Si:C mixture powders were used as the material
sources. Scanning electron microscope images were revealed that the Si nanowires had few tens
nanometer of diameter. The Si-core/SiOx-shell structure of the nanowires was investigated via transmission
electron microscopy. The photoluminescence of the nanowires at room temperature demonstrated a
quantum confinement effect because of the reduced diameter of the nanowires.
Keywords: SiNWs, thermal evaporation method, core/shell structure;
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: Tel: 0962490411;
Email: thuyiop@gmail.com; lam.nguyenhuu@hust.edu.vn
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