Low operating voltage resistive random access memory based on graphene oxide–polyvinyl alcohol nanocomposite thin films

In this study, we have fabricated and investigated the resistive switching behavior of an RRAM device using the nanocomposite of polyvinyl alcohol (PVA) and graphene oxide (GO) as the switching layer in a hybrid Ag/PVAeGO/FTO structure. The resistive switching behavior of the hybrid Ag/PVAeGO/ FTO device depends on the GO amount in the PVAeGO matrix.