Rear-side interfacial modification of µC-SI:H(N+) back surface field layer by controlling its crystaline for silicon heterojunction solar cell applications

In hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction (HJ) solar cell, the high contact resistance or high Schottky barrier at the back-surface field (BSF)/Indium Tin Oxide (ITO) is prejudicial to the majority carrier collections process, as it degrades the fill factor (FF), which in turn, cell efficiency.