Depth distribution of elements in MOS

The atomic concentrations and depth distribution of elements in MOS (metal oxide semiconductor) structures have been investigated using two nuclear analytical methods: Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection (ERD). The elements with atomic masses in range from hydrogen up to copper were identified. Their depth profiles show that a MOS structure consists of metal (Al) layer, silicon oxide layer and a silicon substrate.

11p thuyliebe 08-10-2018 42 0   Download