Electron mobility transistor

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Solution process of graphene-induced ohmic contact between the metal and AlGaN/GaN for hemts application

This work demonstrates an AlGaN/GaN high electron mobility transistor (HEMT) with Cr/Graphene ohmic contacts constructed without heat treatment. The Cr/Graphene ohmic contact was fabricated using a spray-coated graphene nanoflakes solution and electron-beamevaporated Cr. This method does not require a high-temperature annealing step in conventional Ti/Al/Ni/Au ohmic contact. It is suggested that the Cr/graphene combination acts similarly to a doped n-type semiconductor in contact with AlGaN/GaN heterostructures, enabling carrier transport to the AlGaN layer.

8p xuanphongdacy06 18-09-2024 3 1 Download

Chất lượngDesign and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications nước biển ven bờ từ dữ liệu các trạm quan trắc môi trường phía nam Việt Nam (2013- 2017)

In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO2 gate dielectric. The DC and RF characteristics of the proposed GaN MOS-HEMT structure are analyzed by using a TCAD Software.

8p tamynhan4 06-09-2020 4 2 Download