Rutherford Backscattering Spectrometry

In this study we investigated depth distributions of elements in the multilayer structures of TiO2/SiO2/Si before and after ion irradiation. The samples were implanted with Ne+, Ar+, Kr+ and Xe+ ions. For each implantation the multilayer structures were irradiated by the ions with energies of 100, 150, 200 and 250 keV.

8p capheny 28-02-2020 13 1   Download

The atomic concentrations and depth distribution of elements in MOS (metal oxide semiconductor) structures have been investigated using two nuclear analytical methods: Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection (ERD). The elements with atomic masses in range from hydrogen up to copper were identified. Their depth profiles show that a MOS structure consists of metal (Al) layer, silicon oxide layer and a silicon substrate.

11p thuyliebe 08-10-2018 42 0   Download

This paper presents the results of an experimental study of three samples containing various elements in the near-surface layers. The depth profiles of all the elements of different atomic masses from hydrogen to silver were investigated by Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA). The experiments were performed by using the low-energy (about 2 MeV) 4He+ ion beams.

10p thuyliebe 08-10-2018 16 1   Download