Study of elemental depth distribution in the material TiO2/SiO2/Si by rutherford backscattering spectrometry (RBS)

In this study we investigated depth distributions of elements in the multilayer structures of TiO2/SiO2/Si before and after ion irradiation. The samples were implanted with Ne+, Ar+, Kr+ and Xe+ ions. For each implantation the multilayer structures were irradiated by the ions with energies of 100, 150, 200 and 250 keV.