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Study of elemental depth distribution
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In this study we investigated depth distributions of elements in the multilayer structures of TiO2/SiO2/Si before and after ion irradiation. The samples were implanted with Ne+, Ar+, Kr+ and Xe+ ions. For each implantation the multilayer structures were irradiated by the ions with energies of 100, 150, 200 and 250 keV.
8p
capheny
28-02-2020
13
1
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The atomic concentrations and depth distribution of elements in MOS (metal oxide semiconductor) structures have been investigated using two nuclear analytical methods: Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection (ERD). The elements with atomic masses in range from hydrogen up to copper were identified. Their depth profiles show that a MOS structure consists of metal (Al) layer, silicon oxide layer and a silicon substrate.
11p
thuyliebe
08-10-2018
42
0
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