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Báo cáo hóa học: " Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy"

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  1. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 http://www.nanoscalereslett.com/content/6/1/109 NANO REVIEW Open Access Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy Filippo Giannazzo1*, Sushant Sonde1,2, Emanuele Rimini1,3, Vito Raineri1 Abstract In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and point defects (vacancies). Electron mean free path is mainly limited by charged impurities in unirradiated graphene, whereas an important role is played by lattice vacancies after irradiation. The local density of the charged impurities and vacancies were determined for different irradiated ion fluences. Introduction [1] typically exhibit a very high crystalline order, whereas a high-defect density is present both in epitaxial graphene Graphene, a two-dimensional (2D) sheet of carbon atoms growth by thermal decomposition of SiC [6] and in in a honeycomb lattice, attracted the interest of the nanoe- graphene obtained by chemical reduction of graphene lectronics scientific community for its remarkable carrier oxide [7]. transport properties [1,2]. Ideally, in a free-standing gra- Recently, the intentional production of defects in phene sheet without lattice defects and adsorbed impurities, selected areas of a graphene sheet has also been proposed charge carriers can exhibit a giant intrinsic mobility [2] and as a method to locally modulate the transport properties. can travel for micrometers without scattering at room tem- Several methods, like plasma treatments [8], and electron perature. As a matter of fact, very high values of mobility (>2 × 105 cm2 V-1s-1) and electron mean free path have [9] or ion irradiation [10], have been used for this aim. Recently, it has been reported that graphene hydrogena- been observed only in vacuum and at low temperature (5 K) in “suspended” graphene sheets obtained by mechanical tion by exposure to atomic hydrogen resulted in the con- version of graphene, a zero bandgap semiconductor, to exfoliation of highly oriented pyrolytic graphite (HOPG) graphane, a two-dimensional insulator [11]. Among all [3]. The mobility values measured at room temperature these methods, ion irradiation allows a better control commonly reported in the literature range from approxi- mately 2 to 2 × 104 cm2 V-1s-1, depending on the graphene through a precise definition on the ion energy and flu- ence. Spectroscopic characterization methods, like micro synthesis methods [1,4], on the kind of substrate on which Raman spectroscopy (μR), are the commonly used tech- it is deposited [5], and on the processing conditions used to niques to evaluate the density of defects in a graphene fabricate the test patterns for electrical characterization. sheet. The characteristic D line at 1360 cm -1 in the This large variability is a clear indication that the intrinsi- cally outstanding transport properties of graphene are Raman spectra is a fingerprint of defects/disorder in the severely limited by extrinsic factors, like the presence of crystalline lattice of graphitic materials. However, the lat- eral resolution of μ R is limited by the laser spot size charged impurities, lattice defects and, more generally, by (typically in the order of 0.5-1 μm). In this article, we pre- lattice disorder (including local strain). Single layers of gra- phene (SLG) obtained by mechanical exfoliation of HOPG sent a scanning probe method based on nanoscale capa- citance measurements to determine locally (on 10-100 nm scale) the electron mean free path in pristine and in * Correspondence: filippo.giannazzo@imm.cnr.it ion-irradiated graphene with different ion fluences. The 1 CNR-IMM, Strada VIII, 5, Zona Industriale, 95121, Catania, Italy impurity and vacancy densities on the probed area were Full list of author information is available at the end of the article © 2011 Giannazzo et al; licensee Springer. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
  2. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 Page 2 of 8 http://www.nanoscalereslett.com/content/6/1/109 This “step and measure” approach eliminates the lateral extracted by fitting the experimental results with models (shear) force usually present when tip is scanned on a of electron scattering by Coulomb impurities and lattice surface. Moreover, the vertical contact force can be suita- defects. bly minimized to get a good electrical contact to the gra- Experimental details phene layers while avoiding damage at the same time. A modulating bias ΔV = Vg/2(1 + sin(ωt)), with amplitude Graphene samples obtained by mechanical exfoliation of Vg in the range from -1.2 to 1.2 V and frequency ω = 100 HOPG were deposited on a n+-Si substrate covered with kHz, was applied between the Si n + backgate and the 100 nm SiO 2 [12]. Optical microscopy, tapping mode atomic force microscopy (AFM) and μR spectroscopy nanometric contact on graphene represented by a Pt- were used to identify SLG [13]. Some of the as-depos- coated Si tip (see schematic in Figure 1). The ultra-high- ited (pristine) samples were then irradiated with C+ ions sensitive (10-21 F/Hz1/2) capacitance sensor connected to at 500 keV. Irradiations of the samples with C + ions the conductive AFM tip measures, through a lock-in sys- tem, the capacitance variation ΔC induced by the modu- were carried out under high vacuum conditions (10 -6 Torr) to minimize surface contaminations. At 500 keV lating bias. energy, the projected range of the C+ ions is approxi- mately 1 μm, quite deep into the n+-Si substrate. This Results and discussion minimizes the damage both in the 100 nm SiO2 layer In Figure 2, capacitance-voltage curves measured on and at the interface between SiO2 and n+ Si. Infact, a fixed positions on bare SiO 2 and on graphene-coated quality of SiO2 and SiO2/Si interface comparable to that SiO2 are reported for a sample not subjected to ion irra- of non-irradiated samples is crucial for the capacitance diation. The tip positions are indicated in the AFM measurements discussed later. Different C+ ion fluences, image in the inset of Figure 2a. When the tip is in con- ranging from 1 × 1013 to 1 × 1014 ions/cm2, were used tact on bare SiO2, a typical capacitance-voltage curve for for irradiation [14]. a metal-oxide-semiconductor (MOS) capacitor from The lateral homogeneity of the electronic transport accumulation (at negative sample bias) to depletion (at properties both in pristine and ion-irradiated graphene positive sample bias) is measured (see Figure 2a). The was investigated by local capacitance measurements on area of the MOS capacitor is represented by the tip con- tact area Atip , as illustrated in the insert of Figure 2c. the graphene/SiO 2 /n+ Si stack, using scanning capaci- tance spectroscopy (SCS) [12,15]. When tip is in contact on graphene, the measured capa- Scanning capacitance spectroscopy (SCS) was per- citance is minimum around zero bias and increases both for negative and positive bias (see Figure 2b). At Vg = 0, formed at room temperature using a DI3100 AFM by Veeco equipped with Nanoscope V electronics and with the Fermi level in graphene is almost coincident with the scanning capacitance microscopy (SCM) head. SCS is the Dirac point. A positive modulating bias between the an extension of the conventional SCM [16-19]. In SCS, substrate and the tip locally induces a shift of the gra- phene quasi-Fermi energy EF in the conduction band, the conductive AFM tip is placed on a discrete array of positions, lifting the tip by 20 nm at every interval. and, hence, an accumulation of electrons at the SCM SCM Electronic Electronic SLG Module SiO2 n+ Si ~ V Figure 1 Schematic representation of the scanning capacitance spectroscopy setup.
  3. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 Page 3 of 8 http://www.nanoscalereslett.com/content/6/1/109 0.10 graphene CMOS (a.u.) 0.05 SiO2 SiO2 1m 0.00 (a) -0.05 0 graphene 10 Ctot (a.u.) -1 10 -2 10 (b) Aeff (x10 nm ) 2 Graphene 1.0 Graphene Atip Aeff A eff 4 SiO2 0.5 (c ) 0.0 -1.0 -0.5 0.0 0.5 1.0 Vg (V) Figure 2 Evaluation of the effective area from local capacitance measurements. Local capacitance-voltage curves measured on fixed positions on bare SiO2 (a) and on graphene-coated SiO2 (b) for a sample not subjected to ion irradiation. AFM morphology of a graphene flake on SiO2, with indicated the probed positions by the SCS tip. (inset of a). Effective area evaluated from the C-V curves in (a) and (b). Schematic representation of Atip and Aeff (inset of c). The effective area Aeff can be evaluated from the ratio n anometric tip/graphene contact. On the contrary, a negative bias induces a shift of EF in the valence band, of the capacitance measured with the probe on gra- phene-coated regions (|ΔCgr|) and on bare SiO2 regions and, hence, an accumulation of holes at the tip/gra- (|ΔCox|) [15], i.e., Aeff = Atip|ΔCgr|/|ΔCox|, where the tip phene contact. The carrier density n induced by the gate bias Vg can be expressed as n = Cox’Vg/q, where q contact area Atip can be independently determined by is the electron charge, and Cox’ is the oxide capacitance scanning electron microscopy (Atip = 80 nm2 in the pre- per unit area (Cox’ = εoxε0/tox, being ε0 the vacuum per- sent case). The evaluated Aeff is reported as a function mittivity, εox = 3.9 and tox are the relative permittivity of the gate bias in Figure 2c. Except for V g = 0, A eff increases linearly with |Vg| both for negative and posi- and the thickness of the SiO2 film, respectively). The value of E F can be related to the applied bias as E F = tive Vg values. ħvFkF, being kF = (πn)1/2, ħ the reduced Planck’s con- It has been recently demonstrated that the effective stant, and vF = 1 × 106 m/s, the electron Fermi velocity area Aeff obtained by local capacitance measurements is related to the local electron mean free path l in gra- in graphene. The induced charge n spreads over an area, A eff , which can be thought as the tip-graphene- phene by Aeff = πl2 [20]. In Figure 3, l is reported versus the evaluated Fermi energy. It can be noted that l insulator-semiconductor capacitor effective area is almost independent of EF close to the Dirac point. (as schematically illustrated in the insert of Figure 2c).
  4. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 Page 4 of 8 http://www.nanoscalereslett.com/content/6/1/109 50 40 l (nm) 30 20 10 -50 -25 0 25 50 EF (meV) Figure 3 Local electron mean free path versus the Fermi energy in a selected position on pristine graphene. of the impurity (it will be assumed Z = 1), and N ci is The behavior close to the Dirac point is consistent with the common adopted picture of the 2DEG split in a the density of impurities. landscape of adjacent “electron-hole puddles” [21]. Close Finally, the electron mean free path for scattering by vacancies (lvac) can be expressed as [22] to the Dirac point, the effect of a gate bias is limited to a redistribution of carriers between the electrons and 2   EF  holes puddles without significantly changing the total E l vac  E F   2 F  ln  R0   (3) carrier density. Figure 3 shows also that, for |EF| > 25  N vac v F   v F    meV, l increases linearly with EF both in the hole and electron branches. This linear dependence gives indica- where Nvac is the density of vacancies in graphene and tion on the main scattering mechanisms limiting l in R0 is the vacancy radius, that we assumed to be coinci- our graphene samples. dent with the C - C distance in the graphene plane Recently, expressions of the energy dependence of l (approximately 0.14 nm). have been determined for the different scattering The experimentally determined linear dependence of l mechanisms in the framework of a semiclassical model on EF, far from the Dirac point, suggests that scattering based on the Boltzmann transport theory [22]. The elec- with charged impurities and/or point defects, e.g., vacan- tron mean free path limited by scattering with graphene cies, can be assumed as the main mechanisms limiting acoustic phonons (lphon) can be expressed as [22] electron mean free path. In this pristine graphene sample, the density of defects is  3 v s v F 1 23 l phon  E F   (1) negligible, as confirmed by the absence of the characteris- 2 D A kT E F tic D peak in micro-Raman spectra. Hence, charged impu- rities, either adsorbed on graphene surface, or located at where r is the graphene density (r = 7.6 × 10-7 kg/m2) the interface with SiO2 substrate, can be assumed as the [2], DA is the acoustic deformation potential (DA = 18 main scattering source liming l. The density of charged eV) [2], vs is the sound velocity in graphene [2], kB is impurities in the probed position can be estimated by fit- the Boltzmann constant, and T is the absolute ting the experimental curves in Figure 3 with Equation 2. temperature. The best fit (red line) is obtained with Nci = 49 × 1010 cm-2 The electron mean free path limited by Coulomb scat- both for the holes and the electron branch. tering with charged impurities (lci) can be expressed as In Figure 4a, l versus EF measured on an array of 5 × [22] 5 tip positions on pristine graphene is reported. By fit- ting each curve of the array with Equation 2, the local 2   16 0  2v F 2 q2 density Nci for each probed position can be extracted. l ci  E F   1  EF . (2)    v F  0 Z 2q 4 N ci The histogram of the charged impurity density on the   analyzed area is reported in Figure 5a. It exhibits a where ε = 2.4 is the average between ε ox and the Gaussian distribution peaked at 〈Nci〉 = 50 × 1010 cm-2 vacuum relative dielectric constant, Z is the net charge and with FWHM of 4 × 1010 cm-2.
  5. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 Page 5 of 8 http://www.nanoscalereslett.com/content/6/1/109 CI Unirradiated 40 l (nm) 20 (a) 0 CI 13 -2 =1x10 cm 40 20 CI+VAC l (nm) (b) 0 CI 14 -2 =1x10 cm 40 CI+VAC 20 (c) 0 30 40 50 60 EF (meV) Figure 4 Local electron mean free path versus the Fermi energy measured on array of several tip positions on pristine and irradiated graphene at different fluences. On pristine graphene (a). On irradiated graphene with 500 keV C+ ions at fluences 1 × 1013 cm-2 (b) and 1 × 1014 cm-2 (c), respectively. In Figure 4b,c, the measured l versus EF is reported (i) a first group, with l values comparable to those in for two arrays of tip positions on graphene samples irra- the pristine sample, (ii) a second group with reduced diated with two different ion fluences, i.e., F = 1 × 1013 mean free path. We assumed that C irradiation causes cm -2 and F = 1 × 10 14 cm -2 . Comparing the set of the formation of point defects (vacancies), whereas the curves in Figure 4a, i.e., for pristine sample, with those density of charged impurities adsorbed on the graphene on Figure 4b,c, it is evident that the lateral inhomogene- surface or at the interface with the substrate remains ity in the l values increases with the irradiated fluence. almost unchanged. Hence, the first group of curves in However, it is worth noting that two groups of l - E F Figure 4b,c can be associated to the probed positions on the graphene surface without or with a very low density curves can be distinguished for irradiated samples:
  6. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 Page 6 of 8 http://www.nanoscalereslett.com/content/6/1/109 (a) Unirradiated 50 0 13 -2 (b) =1x10 cm 50 Charged Frequency (%) impurities vacancies 0 14 -2 (c) =1x10 cm Charged 50 impurities vacancies 0 0 10 20 40 50 60 10 -2 NCI, Nvac (10 cm ) Figure 5 Histograms of the locally measured densities of charged impurities and vacancies in pristine and ion irradiated graphene. Charged impurities density in pristine graphene (a). Charged impurities and vacancy densities in irradiated graphene with 500 keV C+ ions at fluences 1 × 1013 cm-2 (b) and 1 × 1014 cm-2 (c), respectively. determined from Equations 2-4 using Nvac as the fitting of point defects, whereas the second group associated to the probed positions with point defects. For the first parameter. The distributions of the vacancy densities in group of curves, l can be fitted using Equation 2. The the probed positions are reported in Figure 5b,c, blue histograms of the Nci values determined in the probed bar, for the two fluences. It is worth noting, that, while in graphene irradiated with the lowest fluence Nvac is positions is reported in Figure 4b,c, red bars, for the higher than 2.5 × 1010 cm-2 (i.e. more than one vacancy lowest and highest doses, respectively. It is worth noting that the Nci distributions in irradiated samples are very on the probed area at V g = 1 V ) on only 16% of the similar to those of non-irradiated sample. For the sec- probed positions, in graphene irradiated with the highest ond group of curves in Figure 4b,c, l is limited both by fluence Nvac > 2.5 × 1010 cm-2 on more than 75% of the charged impurities and vacancies scattering, i.e., probed positions. For each fluence, the weighted average of the vacancy l 1  l ci 1  l vac 1 (4) density on the probed area can be obtained by N vac   i 1 N vac ,i f i , being N vac, i the values of the n For simplicity, an average value of the charged impuri- vacancy densities in the histograms and fi the associated ties density will be assumed in those positions (〈Nci〉 = frequencies. The obtained 〈 N vac 〉 exhibits a linear 50 × 10 10 cm -2 ), and the local vacancy density was
  7. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 Page 7 of 8 http://www.nanoscalereslett.com/content/6/1/109 increase as a function of fluence, as reported in Figure 6. Acknowledgements The authors want to acknowledge S. Di Franco and A. Marino from CNR- This trend can be fitted by the following relation: IMM, Catania, for their expert assistance in sample preparation and ion irradiation experiments. This study has been supported, in part, by the N vac  N vac ,0   N gr  (5) European Science Foundation (ESF) under the EUROCORE program EuroGRAPHENE, within GRAPHIC-RF coordinated project. where 〈 N vac,0 〉 is the extrapolation of the average Author details vacancy density at F = 0, s is the cross section for 1 CNR-IMM, Strada VIII, 5, Zona Industriale, 95121, Catania, Italy 2Scuola Superiore di Catania, Via San Nullo, 5/I, 95123, Catania, Italy 3Department of direct C-C collisions, Ngr is the C density in a graphene Physics and Astronomy, University of Catania, Via S. Sofia, 95123, Catania, sheet (Ngr = 4 × 1015 cm-2), and ν is the vacancy genera- Italy tion efficiency. By linear fitting the data in Figure 6, Authors’ contributions 〈Nvac,0〉 = (1.59 ± 0.04) × 1010 cm-2 and νsNgr = (8.55 ± FG and VR conceived the study. FG coordinated the experiment, participated 0.06) × 10-4 are obtained. For the calculated values of to the analysis of the data and wrote the article. SS carried out the sample the C-C scattering cross section s, ranging from 2 × 10- preparation, the measurements and participated to the analysis of the data. ER worked on the evaluation of ion-graphene interaction cross sections. All 17 to 7 × 10-17 cm2, a very low vacancy generation effi- the authors read and approved the manuscript. ciency (ranging approximately from 0.3 to 1.1%) is obtained for graphene irradiation with 500 keV C+ ions. Competing interests The authors declare that they have no competing interests. It might be associated to a dynamical annealing, e.g. vacancy-interstitial recombination, during irradiation. Received: 30 September 2010 Accepted: 31 January 2011 Published: 31 January 2011 Conclusions References In summary, the authors propose an innovative method 1. Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, based on local capacitance measurements to probe the Grigorieva IV, Firsov AA: Electric Field Effect in Atomically Thin Carbon local changes in graphene electron mean free path, due Films. Science 2004, 306:666-669. 2. Chen JH, Jang C, Xiao S, Ishigami M, Fuhrer MS: Intrinsic and extrinsic to the presence of charged impurities or point defects, e. performance limits of graphene devices on SiO2,. Nat Nanotechnol 2008, g., vacancies. Irradiation with 500 keV C+ ions at fluences 3:206-209. ranging from 1 × 1013 to 1 × 1014 cm-2 was used to intro- 3. 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Elias DC, Nair RR, Mohiuddin TMG, Morozov SV, Blake P, Halsall MP, 10 Ferrari AC, Boukhvalov DW, Katsnelson MI, Geim AK, Novoselov KS: Control of Graphene’s Properties by Reversible Hydrogenation: Evidence for 5 Graphane. Science 2009, 323:610. 12. Sonde S, Giannazzo F, Raineri V, Rimini E: Dielectric thickness dependence of capacitive behavior in graphene deposited on silicon dioxide. J Vac Sci Technol B 2009, 27:868-873. 13. Giannazzo F, Sonde S, Raineri V, Patanè G, Compagnini G, Aliotta F, 0 Ponterio R, Rimini E: Optical, morphological and spectroscopic 0 2 4 6 8 10 characterization of graphene on SiO2. Phys Status Solidi C 2010, 7:1251. 14. Compagnini G, Giannazzo F, Sonde S, Raineri V, Rimini E: Ion irradiation and defect formation in single layer graphene. Carbon 2009, 47:3201. 13 -2 (10 cm ) 15. Giannazzo F, Sonde S, Raineri V, Rimini E: Screening Length and Quantum Capacitance in Graphene by Scanning Probe Microscopy. Nano Lett 2009, 9:23. 16. 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  8. Giannazzo et al. Nanoscale Research Letters 2011, 6:109 Page 8 of 8 http://www.nanoscalereslett.com/content/6/1/109 17. Giannazzo F, Raineri V, Mirabella S, Impellizzeri G, Priolo F: Drift mobility in quantum nanostructures by scanning probe microscopy. Appl Phys Lett 2006, 88:043117. 18. Ciampolini L, Giannazzo F, Ciappa M, Fichtner W, Raineri V: Simulation of scanning capacitance microscopy measurements on micro-sectioned and bevelled n+-p samples. Mater Sci Semicond Process 2001, 4:85. 19. Giannazzo F, Priolo F, Raineri V, Privitera V, Picariello A, Battaglia A, Moffat S: Two dimensional effects on ultra low energy B implants in Si. J Vac Sci Technol B 2002, 20:414-418. 20. Giannazzo F, Sonde S, Raineri V, Rimini E: Irradiation damage in graphene on SiO2 probed by local mobility measurements. Appl Phys Lett 2009, 95:263109. 21. Martin J, Akerman N, Ulbricht G, Lohamann T, Smet JH, Von Klitzing K, Yacobi A: Observation of electron-hole puddles in graphene using a scanning single-electron transistor. Nat Phys 2008, 4:144. 22. Stauber T, Peres NMR, Guinea F: Electronic transport in graphene: A semiclassical approach including midgap states. Phys Rev B 2007, 76:205423. doi:10.1186/1556-276X-6-109 Cite this article as: Giannazzo et al.: Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy. Nanoscale Research Letters 2011 6:109. Submit your manuscript to a journal and benefit from: 7 Convenient online submission 7 Rigorous peer review 7 Immediate publication on acceptance 7 Open access: articles freely available online 7 High visibility within the field 7 Retaining the copyright to your article Submit your next manuscript at 7 springeropen.com
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