Formation of radiation-disturbed layer in Al/SiO2/n-Si structures irradiated with helium ions with energy 5 MeV

This paper presents the change in the volt-farad characteristics of the Al/SiO2/n-Si structure irradiated with helium ions with the energy of 5 MeV in the frequencies of 1, 10, 100, and 1000 kHz. The voltage dependence of the capacitance and the frequency dependence of the dissolution angle are measured on an LCR Agilent E4980A and Agilent 4285A meter.