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Lắng đọng lớp phủ CrN trên nền thép SKD61 bằng phương pháp phún xạ xung một chiều magnetron
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Bài viết bàn về lớp phủ CrN được lắng đọng trên nền thép SKD61 bằng phương pháp phún xạ xung một chiều magnetron trên thiết bị chân không B30 VTD; sử dụng nguồn xung DC giữ ổn định ở 320W; đế thép SKD61 được thiên áp ở 150V.
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Nội dung Text: Lắng đọng lớp phủ CrN trên nền thép SKD61 bằng phương pháp phún xạ xung một chiều magnetron
- 058-062 1,2*, 1,3 1 4 1 2 q , , 3 K 4 C6 - -6- -02-2017 B trên thi B30 VTD 320 W, thiên áp -150 V. 2 trong m. 2 là 6 sccm, và nén - 4,11 GPa . Abstract This paper discussed about the CrN layer coating on SKD61 substrate with pulse DC magnetron sputtering by B30-VTD equipment. The vacuum system has power pulses, kept at capacity of 320 W and bias voltage - 150 V on the substrate. The N2 gas flow is controled in range 4 ÷ 8 sccm and pulse frequency varied in range 150 ÷ 50 kHz. The experiment results demonstracted the deposition rate of CrN layer was affected by N2 gas flow and pulse frequency. The coating thickness decreased with increasing gas flow and pulse frequency from 7.1 down to 4.2 m. The X-ray diffraction (XRD) of CrN coating was shown that the layer has good stabilization with crystalline structure in N 2 gas flow 6 sccm, the main crystal orientation [200], the maximum residual compressive stress under the surface (200) was - 4.11 GPa in case of frequency pulse 150 kHz. Keywords: Pulsed DC sputtering; CrN coating; Pressure molding; Residual stress. * 0 0 *
- 058-062 2. -1 0 -1 2. -2 f 0
- 058-062 f 2 0 2 2 2 2 2 3. 2 2 2 x 1 1 2 2 x 2 x CrN CrN CrN CrN CrN Cr CrN CrN Cr2N 2 2 2 2
- 058-062 2 2 2 2 2 Ar N2 0 2 2 2 2 2 2 2 2 [1] Failure Analysis 20 (2012) 43-53. [2] between molten aluminum and selected die castings 2 http://dspace.library.colostate.edu/webclient/Delivery Manager/digitool_items/csm01_storage/2013/09/03/fi le_1/212644. 2 [3] P.J.C. Avelar-Batista thickness and deposition methods on the stripping rate of Cr- Technology 200 (2005) 1842-1848. [4] O. Salas, K. Kearns, S. Carrera, J.J. Moore
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