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Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications
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A novel 50 nm recessed T-gate AlN spacer based InAlN/GaN HEMT with AlGaN back-barrier is designed. The static and dynamic characteristics of the proposed device structure are investigated using Synopsys TCAD tool.
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