Anode active area

This paper reports on the design and characterization of 6.5kV class 4H-SiC PiN diodes with different active areas of 2, 8, and 24mm2 . Diodes edge termination is a combination of MESA and JTE. The blocking voltage of 6.5kV was achieved on the three types of diodes. Diodes operation stability is studied in term of temperature dependence and DC stress. In the limit of used package, these diodes present a stable operation until 225°C. The reverse leakage current at 225°C is less than 3µA at 3kV for 24mm2diodes.

6p kequaidan3 10-03-2020 15 0   Download