Ferroelectric oxides

In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting.

5p viberbers 09-08-2023 7 3   Download

Despite the important role being played by the oxide charge in ferroelectric memories the origin and distribution of this charge in LN-based heterostructures during the crystallization of LN films are not clear yet. The present work is aimed to investigate how the oxide charge evolves during the crystallization of amorphous LieNbeO films deposited onto Si substrates.

7p larachdumlanat129 14-01-2021 11 2   Download

The perovskite oxide interface has attracted extensive attention as a platform for achieving strong coupling between ferroelectricity and magnetism. In this work, robust control of magnetoelectric (ME) coupling in the BiFeO3/BaTiO3 (BFO/BTO) heterostructure (HS) was revealed by using the first-principles calculation. Switching of the ferroelectric polarization of BTO induce large ME effect with significant changes on the magnetic ordering and easy magnetization axis, making up for the weak ME coupling effect of single-phase multiferroic BFO.

7p covid19 14-06-2020 18 0   Download

As a result, thecapacitor using Pb1.2(Zr0.4Ti0.6)O3ferroelectric layer annealed at 600oC and LNO bottom electrode providedan interesting ferroelectricity, which includeda remnant polarization of 21µC/cm2 and a saturated polarization of 35µC/cm2 . Moreover, the leakage current density was lower than 2 × 10-5 A/cm2 .

7p cathydoll4 21-02-2019 21 0   Download