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Gallium nitride
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Boron deposition on both n-Si and n-GaN in the temperature range 250 - 500 °C, has been shown to form diodes with low saturation currents, i.e., electron injection from the n-substrate into the B-layer was efficiently suppressed. Moreover, down to 3-nm-thick B-layers on Si were shown to form a material barrier to Al, opening the possibility of fabricating Au-free gates for gallium-nitride high-electron-mobility transistors (GaN HEMTs).
7p
vihawkeye
26-05-2023
10
3
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This study examines an effect of pressure up to 50 GPa on the elastic and mechanical properties of wurtzite gallium nitride (w-GaN) by using classical potential within the Atomistic Tool Kit (ATK)-force field.
10p
meyerowitz
25-12-2021
8
0
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Using a mass-loss method, we investigated the solubility change of gallium nitride (GaN) in supercritical ammonia with mixed mineralizers [ammonium chloride (NH4Cl)+ammonium bromide (NH4Br) and NH4Cl+ammonium iodide (NH4I)].
6p
vijiraiya2711
27-05-2020
10
1
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Technology Pioneer Transphorm sees its mission as increasing the efficiency of voltage conversion in electronic systems. While electric transmission lines are most effective at moving alternating current over long distances, most devices operate internally on direct current. Silicon-based converters manage only to transform about 85% of the electric power. The remaining 15% is lost in heat that can damage delicate electronics.
84p
doiroimavanchuadc
19-02-2013
35
4
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Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : Cathodoluminescence spectra of gallium nitride nanorods
7p
sting03
06-02-2012
30
2
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Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí sinh học đề tài : Cathodoluminescence spectra of gallium nitride nanorods
15p
dauphong8
14-01-2012
37
4
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