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Organic ferroelectric-
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In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting.
5p
viberbers
09-08-2023
7
3
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The study has indicated that MOFs has maintained extensive applications in Biological imaging and sensing, Drug delivery systems, Methane storage, Semiconductors, Bio-mimetic mineralization, Carbon capture, Desalination/ion separation, Water vapor capture and Ferroelectrics and Multiferroics.
20p
tocectocec
25-05-2020
19
0
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The influence of fabricating conditions such as gelization, sintering temperature on crystallinity was studied. The result showed that Bi0.5Na0.5TiO3 was in single phase when compenstation amount of Na in gelization is 40 mol%; sintering temperature higher than 800 oC and sintering time is 2 h. The bandgap of Bi0.5Na0.5TiO3 which estimated from absorption spectroscopy is in the range of 3.01 - 3.18 eV.
8p
cumeo3000
01-08-2018
31
0
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