Reactive ion etching

Vertical organic field-effect transistors (VOFETs) provide an advantage over lateral ones with respect to the possibility to conveniently reduce the channel length. This is beneficial for increasing both the cut-off frequency and current density in organic field-effect transistor devices.

14p viberbers 09-08-2023 5 3   Download

Ultrathin silicon nitride SiNx membrane suspended on a silicon wafer is a popular twodimensional platform in MEMS applications. The unsupported membrane has a low thermal conductivity, is electrically insulated, and very robust against mechanical impact. Remarkably thin, it is difficult to fabricate and manipulate. Recently equipped with a dual chamber system for plasma enhanced chemical vapor deposition (PECVD) and reactive ion etching, we calibrate it to deposit silicon nitride Si3N4, silicon dioxide SiO2, and to dry etch these materials.

8p nguaconbaynhay11 07-04-2021 14 2   Download

Mục tiêu của Luận án này là chế tạo ra sợi Si NWs hướng đến ứng dụng vào cấu trúc PMT đối xứng tâm. Các công việc đã được thực hiện trong Luận án là: Tổng hợp hạt nano vàng hoàn toàn bằng phương pháp vật lý kết hợp giữa bốc bay tạo màng và gia nhiệt nhanh. Nghiên cứu hiện tượng cộng hưởng plasmon bề mặt khi hạt vàng tiếp xúc với lớp bán dẫn silic, sử dụng phương pháp khắc sâu ion phản ứng (Deep Reactive Ion Etching – DRIE) với các hạt nano vàng làm mặt nạ để tạo ra sợi nano silic ứng dụng trong cấu trúc PMT,....

129p vhuyenthao 04-01-2018 109 16   Download

In the MEMS industry, systems for deep reactive-ion etching (DRIE) utilize fast pumping, fast-response mass-flow controllers inductive coupling of power, and heated chamber and pump lines that are critical to achieve reliable etch rates. In contrast, we have achieved 8:1 aspect-ratio PhC structures with 62nm vertica membrane walls using a standard reactive-ion etching process based on a sidewall passivation processes. In the remainder of this section we discuss this fabrication process.

16p quynho77 13-11-2012 42 0   Download

To maximize the extent of the photonic bandgap in a finite-height photonic-crystal (PhC) slab one can increase the fill-factor in the PhC lattice. Among the realistic choices of possible 2D lattices, high fill- factor triangular lattices of cylindrical holes in a high index dielectric, namely silicon, are by far the most commonly used. In this paper, we present a method for fabrication of very high fill-factor PhC devices in silicon-on-insulator (SOI) substrates using electron-beam lithography and high-aspect-ratio reactive-ion etching (RIE).

12p quynho77 13-11-2012 50 0   Download

Several techniques for fabrication of through-wafer vias in silicon have been compared in terms of achievable via diameter, shape and geometry and their influence on mechanical strength of silicon dies/wafers. Assessed techniques are: powder blasting, laser melt cutting, laser ablation, and deep reactive ion etching. The resolution of each method and influence on geometry was evaluated by fabrication through-wafer holes and slots in 240µm-thick silicon wafers. The mechanical strength is measured using ring-on-ring (RoR) and four-point bending methods.

17p quynho77 13-11-2012 34 0   Download

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: New Colloidal Lithographic Nanopatterns Fabricated by Combining Pre-Heating and Reactive Ion Etching

5p dauphong17 21-02-2012 37 2   Download