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Semiconductor because

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  • In this paper, we present one method to determine the band gap energy of ZnO and ZnO:Tb3 materials. ZnO:Tb3 material has prepared by forced hydrolysis method. All samples have zinc oxide hexagonal wurzite structure. The obtained results show that the energy of the band gap depends on Tb3 molar ratio.

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  • Semiconductors nanoparticles have quantum size effects and non-linear optical characteristics as well as high quantum efficiency, making them next-generation materials that can be applied in various optoelectronic devices. Semiconductor nanoparticles have attracted much attention because of their novel electric and optical properties originating from surface and quantum confinement effects.

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