Semiconductor theory

The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered.
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Tham khảo sách 'mosfet modeling for vlsi simulation theory and practice international series on advances in solid state electronics', kỹ thuật  công nghệ, điện  điện tử phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả
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Introduction 1 Ideal Diode 1 Semiconductor Materials 3 Energy Levels 6 Extrinsic Materials—n and pType 7 Semiconductor Diode 10 Resistance Levels 17 Diode Equivalent Circuits 24 Diode Specification Sheets 27 Transition and Diffusion Capacitance 31 Reverse Recovery Time 32 Semiconductor Diode Notation 32 Diode Testing 33 Zener Diodes 35 LightEmitting Diodes (LEDs) 38 Diode Arrays—Integrated Circuits 42 PSpice Windows 43
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This chapter presents the basic theory and characteristics of stimulated emission and optical amplification gain in semiconductors. The former is the mostimportant principlethat enablessemiconductorlaserstobeimplemented, and the latter is the most important parameter for analysis of the laser performances. First, stimulated emission in semiconductors is explained, and then quantum theory analysis and statistic analysis using the density matrix of the optical amplification gain are given.
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The increasing demand on ultra miniturized electronic devices for ever improving performances has led to the necessity of a deep and detailed understanding of the mathematical theory of charge transport in semiconductors.
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Tham khảo sách 'the grand unified theory of software engineering', công nghệ thông tin, quản trị mạng phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả
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(BQ) Part 1 book "Electronic devices and circuit theory" has contents: Semiconductor diodes, diode applications, bipolar junction transistors, field effect transistors, FET biasing, BJT transistor modeling,...and other contents.
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Automation is the use of control systems (such as numerical control, programmable logic control, and other industrial control systems), in concert with other applications of information technology (such as computeraided technologies [CAD, CAM, CAx]), to control industrial machinery and processes, reducing the need for human intervention. In the scope of industrialization, automation is a step beyond mechanization.
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This third volume of the book series Lessons In Electric Circuits makes a departure from the former two in that the transition between electric circuits and electronic circuits is formally crossed. Electric circuits are connections of conductive wires and other devices whereby the uniform ow of electrons occurs. Electronic circuits add a new dimension to electric circuits in that some means of control is exerted over the ow of electrons by another electrical signal, either a voltage or a current....
486p ndkhuong177 14072012 76 27 Download

Such a breathtaking pace of research has allowed to explore the field in several directions within just a few years. The synthesis of freestanding nanowire structures now nvolves a large variety of methods and materials, including elemental and compound (both binary and multinary) semiconductors as well as complex modulated nanostructures.
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Electrical resistivity (also known as resistivity, specific electrical resistance, or volume resistivity) quantifies how strongly a given material opposes the flow of electric current. A low resistivity indicates a material that readily allows the movement of electric charge. Resistivity is commonly represented by the Greek letter ρ (rho). The SI unit of electrical resistivity is the ohm⋅metre (Ω⋅m)[1][2][3] although other units like ohm⋅centimetre (Ω⋅cm) are also in use.
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Diffusion is the transport of matter from one point to another by thermal motion of atoms or molecules. It is relatively fast in gases, slow in liquids, and very slow in solids. Diffusion plays a key rˆole in many processes as diverse as intermixing of gases and liquids, permeation of atoms or molecules through membranes, evaporation of liquids, drying of timber, doping silicon wafers to make semiconductor devices, and transport of thermal neutrons in nuclear power reactors.
0p khangoc2391 11082012 37 4 Download

The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phaselockedloops, deltasigma sensing circuits, voltage/current references, opamps, the design of data converters, and much more.
537p nguyenthai_thinh 14032013 82 34 Download

This chapter provides the basis for the discussion in the following chapters by summarizing the fundamental concepts and the quantum theory concerning the interaction between electrons and photons in a form that is convenient for theoretical analysis of semiconductor lasers [1–9]. First, quantization of electromagnetic fields of optical waves is outlined, and the concept of a photon is clarified. Quantum theory expressions for coherent states are also given. Then the quantum theory of electron–photon interactions and the general characteristics of optical transitions are explained. ...
20p vuongpm 16052010 99 16 Download

.MOSFET MODELING FOR VLSI SIMULATION Theory and Practice .International Series on Advances in Solid State Electronics and Technology (ASSET) Founding Editor: ChihTang Sah Published: Modern Semiconductor Quantum Physics by Li MingFu Topics in Growth and Device Processing of IIIV Semiconductors by Stephen John Pearton, Cammy R. Abernathy & Fan Ren Ionizing Radiation Effects in MOS Oxides by Timothy R. Oldham Forthcoming.
633p louisxlll6 28122012 48 7 Download