Highly efficient two-step nitrogen doping of graphene oxide-based materials in oxygen presence atmosphere for high-performance transistors and electrochemical applications

Nitrogen content in graphene influences application performance. Although many studies have been conducted on single-process nitrogen (N)-doping, dopant content is still quite low. First, graphene oxide (GO) was hydrothermally nitrogen-doped. This nitrogen-doped reduced graphene oxide (NrGO) was then subjected to secondary plasma treatment. Two nitrogen(N)-doping mechanisms were observed depending on graphene's oxygen functionalized.