RadFET dose response in the CHARM mixed-field: FLUKA MC simulations

This paper focuses on Monte Carlo simulations aimed at calculating the dose response of the RadFET dosimeter, when exposed to the complex CHARM mixed-fields, at CERN. We study how the dose deposited in the gate oxide (SiO2) of the RadFET is affected by the energy threshold variation in the Monte Carlo simulations as well as the materials and sizes of scoring volumes.