Carrier transport in semiconductors

Part 1 of ebook "Applied scanning probe methods X: Biomimetics and industrial applications" provides readers with contents including: gecko feet, natural attachment systems for smart adhesion - mechanism, modeling, and development of bio-inspired materials; carrier transport in advanced semiconductor materials; visualization of fixed charges stored in condensed matter and its application to memory technology; applications of scanning probe methods in chemical mechanical planarization;...

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In this chapter, you will learn about: Generation and Recombination, thermal generation/excitation, optical generation/excitation, particle bombardment and other external sources.

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Upon completion of this course, the student will learn: Understanding of the concept of band gap in semiconductors, to distinguish direct and indirect band gap semiconductors, and to relate the band gap with the wavelength of optical absorption and emission, understanding of doping of semiconductors to determine the free carrier concentration, knowledge of the formation of p-n junctions to explain the diode operation and to draw its I-V characteristics.

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In this chapter, you will learn about: Intrinsic semiconductors, doped – extrinsic materials, effective mass approximation, density of states, fermi-dirac distribution function, temperature dependence, generation-recombination,...

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In this chapter, you will learn about: Thermal generation/excitation, optical generation/excitation, particle bombardment and other external sources.

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In this chapter, you will learn about: carrier transport in semiconductors, diffusion of carriers, diffusion processes, diffusion and recombination, continuity equations, einstein relation.

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Under normal operation of a diode, an applied reverse bias (voltage) will result in a small current flow through the device. However, at a particular high voltage, which is called breakdown voltage VBD, large currents start to flow. If there is no current limiting resistor, which is connected in series to the diode, the diode will be destroyed. There are two physical effects which cause this breakdown. In this chapter, you will learn about: in the bulk of the diode outside the depletion region, the semiconductor is neutral.

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The simplest and most fundamental nonlinear circuit element is the diode. Just like a resistor, the diode has two terminals; but unlike the resistor , which has a linear (straight-line) relationship between the current flowing through it and the voltage appearing across it, the diode has a nonlinear i-v characteristic. In this chapter, you will learn about: The ideal diode, terminal characteristics of junction diodes, modeling the diode forward characteristics, load line analysis.

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Upon completion of this topic on P-N Junctions, you will be able to appreciate: Knowledge of the formation of p-n junctions to explain the diode operation and to draw its I-V characteristics. so that you can draw the band diagram to explain their I-V characteristics and functionalities. Diode break down mechanisms; including the Avalanche breakdown and Zenor break down; The Zener Diodes.

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Bài giảng "Vật liệu học - Chương 6: Electrical properties" cung cấp cho người học các kiến thức về Ohm’s law, energy levels of an isolated atom, conduction & electron transport, charge carriers in insulators and semiconductors, energy bands, the mass action law,... Mời các bạn cùng tham khảo.

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Lecture Microelectronic devices and circuits - Lecture 3: Semiconductor Physics (II): Carrier Transport. The following will be discussed in this chapter: Thermal Motion, carrier drif, carrier diffusion.

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After the ground breaking discovery of electrical charge carrier transport in polymers in the late 1980s by Alan J. Heeger, Alan G. MacDiarmid and Hideki Shirakawa [1–3], who were awarded the Nobel Prize in chemistry in 2000, the question arose as to whether organic materials would also find applications as organic semiconductors. This field really started to attract major attention after the demonstration of the first organic light emitting device (OLED) in 1987 by Tang and Van Slyke [4].

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Amorphous materials have attracted much attention in the last two decades. The first reason for this is their potential industrial applications as suitable materials for fabricating devices, and the second reason is the lack of understanding of many properties of these materials, which are very different from those of crystalline materials. Some of their properties are different even from one sample to another of the same material.

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The increasing demand on ultra miniturized electronic devices for ever improving performances has led to the necessity of a deep and detailed understanding of the mathematical theory of charge transport in semiconductors.

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