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GaP band gap narrowing

Xem 1-6 trên 6 kết quả GaP band gap narrowing
  • The F2B slab model weakens the oscillations and calculations on F2B model quickly converge. However, the F2B model leads to artificial narrowness of band gap. Besides, when the number of layers increases, surface energy obtained from all three slab models approaches similar values. In particular, values of surface energy from DFT calculations converge to the experimental range for all three slab models.

    pdf8p dianmotminh02 03-05-2024 5 2   Download

  • This paper also presents typical current-voltage characteristics of the GNRFET for demonstration. We have proposed a way to calculate the on-off current ratio for GNRFET having channel length of 10 nm and width of 1 nm. Scaling of channel length of GNRFET below 10 nm is observed.

    pdf6p vidoctorstrange 06-05-2023 5 4   Download

  • Characterization results show that N-doped TiO2 samples have a broader absorption spectrum and a higher antibacterial efficiency against E. coli than pure samples. The DFT calculation suggests that nitrogen ion doping induces the formation of new states closed to the valence band leading to a narrowing of the band gap and a great improvement in photocatalytic activity in the visible light region of the doped material.

    pdf8p tamynhan8 04-11-2020 7 1   Download

  • Bismuth dioxide selenide, Bi2O2Se, is a thermoelectric material that exhibits low thermal conductivity. Detailed understanding of the compounds band structure is important in order to realize the potential of this narrow band semiconductor. The electronic band structure of Bi2O2Se is examined using first - principles density functional theory and a primitive unit cell. The compound is found to be a narrow band gap semiconductor with very flat bands at the valence band maximum (VBM). VBM locates at points off symmetry lines. The energy surface at VBM is very flat.

    pdf12p nguyenxuankha_bevandan 14-08-2020 13 1   Download

  • This paper reports on the temperature-dependent photoluminescence of porous GaP under the 355-nm excitation. Porous GaP was formed by electrochemical anodization of the (111)-oriented bulk material. Photoluminescence taken from the porous GaP at room temperature shows a narrow green emission band peaking at 550 nm (2.25 eV) and a broad red emission one peaking at 770 nm (1.65 eV).

    pdf7p vidonut2711 08-11-2019 8 0   Download

  • Introduction to LEDs: How LEDs work + some points. Comparison with other sources of light. LED in communication. Blue &White LED technologies. How they are made? Their application? Brief about blue laser? Stands for light emitting diode. Semiconductor device: p-n junction forward-biased.current emits incoherent narrow spectrum light (due to recombination in transition region near the junction.) Color of the emitted light depends on the chemical of the semiconducting material used. (Near-ultraviolet, visible or infrared.)...

    ppt52p lehieukutek 26-12-2009 214 133   Download

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