Temperature-dependent photoluminescence study of porous GaP

This paper reports on the temperature-dependent photoluminescence of porous GaP under the 355-nm excitation. Porous GaP was formed by electrochemical anodization of the (111)-oriented bulk material. Photoluminescence taken from the porous GaP at room temperature shows a narrow green emission band peaking at 550 nm (2.25 eV) and a broad red emission one peaking at 770 nm (1.65 eV).