Impurity diffusion

Lecture ECE 6450 Microelectronic - Chapter 3: Diffusion. After studying this section will help you understand chemical source in a vapor at high temperature. Doped oxide source (either deposited at high temperature or as a “Spin on polymer). Diffusion/annealing from an Ion implanted source.

22p trollhunters 10-01-2022 7 0   Download

In this paper we use a new method based on Einstein’s equation to calculate the diffusion coefficient of impurity atoms in the disorder systems. Simulation results show that the diffusion coefficient D obeys the Arrhenius law. The dependence of the diffusion coefficient D on temperature for regular disordered lattice is also examined and discussed.

7p larachdumlanat127 20-12-2020 10 1   Download

The effects of strain on the diffusion of impurities in silicon crystal are investigated using the statistical moment method (SMM). The influence of tensile strain on diffusion coefficient D is characterized by relaxation volume V r and migration volume V m. The numerical results for B and P diffusion in silicon that are performed and compared to experimental data show good agreement.

8p tamynhan8 04-11-2020 9 0   Download