Lithography and pattern transfer

Lecture ECE 6450 Microelectronic - Chapter 7: Lithography and pattern transfer. After studying this section will help you understand PR pattern is same as mask. On exposure to light, light degrades the polymers (described in more detail later) resulting in the photoresist being more soluble in developers. The PR can be removed in inexpensive solvents such as acetone.

20p trollhunters 10-01-2022 9 1   Download

Wang et al. Nanoscale Research Letters 2011, 6:367 http://www.nanoscalereslett.com/content/6/1/367 NANO EXPRESS Open Access Freestanding HfO2 grating fabricated by fast atom beam etching Yongjin Wang1,2*, Tong Wu2, Yoshiaki Kanamori2 and Kazuhiro Hane2 Abstract We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator.

5p dauphong13 09-02-2012 41 4   Download