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Film transistor memory
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This paper presents a new analytical expression for current-voltage characteristics of the Ferroelectric Field Effect Transistor (FeFET), a promising candidate for nonvolatile memories. For this research, a FeFET model using Pt/SrBi2Ta2O9/Insulators/Si thin film as an effect gate stack was proposed and assessed.
13p
vimarillynhewson
02-01-2024
4
3
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In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting.
5p
viberbers
09-08-2023
7
3
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A novel concept of NAND memory array has been proposed by using only ferroelectricgate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between Bi3.25La0.75Ti3O12 and PbZr0.52TiO0.48O3 (BLT/PZT) gate insulator.
7p
viposeidon2711
17-09-2019
12
0
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