Gate insulator

Ebook "Imaging and manipulation of adsorbates using dynamic force microscopy: Proceedings from the AtMol conference series, Nottingham, UK, April 16–17, 2013" expands on the previous volumes in the series Advances in Atom and Single Molecule Machines. DFM is an exceptionally powerful tool for the imaging and probing of adsorbates on insulators and is now a component of the type of multiprobe interconnection systems described in Vol. 1 of the series. DFM can also be used to translate atoms and molecules in the context of the fabrication of the type of logic gates described in Vol. 2.

169p tudohanhtau1006 29-03-2024 8 1   Download

This paper presents a new analytical expression for current-voltage characteristics of the Ferroelectric Field Effect Transistor (FeFET), a promising candidate for nonvolatile memories. For this research, a FeFET model using Pt/SrBi2Ta2O9/Insulators/Si thin film as an effect gate stack was proposed and assessed.

13p vimarillynhewson 02-01-2024 4 3   Download

In a ferroelectric-gate thin film transistor memory (FGT) type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting.

5p viberbers 09-08-2023 7 3   Download

In this paper, the mechanisms that make the subthreshold swing decreased and the on-current increased are properly elucidated to provide an adequate understanding on the device physics and design of HGD-TFETs.

12p wangxinling 23-07-2021 8 0   Download

Active Power Filter (APF) is capable of changing the size and frequency of harmonics as well as changes in reactive power compensation. It is important to control the stability of the DC-link capacitor voltage stability for it. For DC voltage controls of APF, there are two important achievements.

15p vivalletta2711 11-01-2020 19 1   Download

A novel concept of NAND memory array has been proposed by using only ferroelectricgate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between Bi3.25La0.75Ti3O12 and PbZr0.52TiO0.48O3 (BLT/PZT) gate insulator.

7p viposeidon2711 17-09-2019 12 0   Download

The studies of fabricatation, measurement and analysis of an organic metal-insulator-semiconductor (MIS) memory capacitor with a floating-gate like of Cytop polymer and photogate dielectric are reported in this paper. The storage mechanism is analyzed and discussed through hysteresis in capacitance-voltage measurements at different applied frequencies and DC voltages.

7p viengland2711 23-07-2019 6 0   Download

Chương này gồm có những nội dung chính sau: Diodes, bipolar junction transistor (BJT), metal oxide semiconductor effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), thyristor, gate turn of thyrisor (GTO), triode alternative current (TRIAC). Mời tham khảo.

19p tangtuy19 21-07-2016 66 14   Download

With technology advancements in semiconductor devices such as insulated gate bipolar transistors (IGBTs) and gate commutated thyristors (GCTs), modern highpower medium voltage (MV) drives are increasingly used in petrochemical, mining, steel and metals, transportation and other industries to conserve electric energy, increase productivity and improve product quality. Although research and development of the medium voltage (2.3 KV to 13.8 KV) drive in the 1-MW to 100-MW range are continuously growing, books dedicated to this technology seem unavailable.

333p ctq_109 28-02-2013 118 23   Download

This paper presents a new design method for all-optical NAND and AND logic gates based on 3x3 general interference multimode interference (GI MMI) coupler. The whole device is realized on the silicon on insulator (SOI) platform. The transfer matrix method (TMM) and three dimensional beam propagation method (3D-BPM) are used to optimally design these devices. Key words: Optical logic gate, multimode interference (MMI) coupler, silicon on insulator (SOI), beam propagation method (BPM)

7p tuanlocmuido 19-12-2012 33 1   Download

FET ( Field Effect Transistor) -Transistor hiệu ứng trường – Transistor trường. Có 2 loại: Junction field- effect transistor - viết tắt là JFET: Transistor trường điều khiển bằng tiếp xúc P-N (hay gọi là transistor trường mối nối). Insulated- gate field effect transistor - viết tắt là IGFET: Transistor có cực cửa cách điện. Thông thường lớp cách điện được dùng là lớp oxit nên còn gọi là metal - oxide - semiconductor transistor (viết tắt là MOSFET)....

56p cuongbkav 14-11-2012 335 110   Download

MOSFET: Metal-Oxide Semiconductor Field Effect Transistor • MOSFET được sử dụng nhiều trong công nghệ chế tạo IC – Kích thước nhỏ – Công suất tổn hao thấp – Giá thành thấp • Chế tạo IC tương tự và số có độ tích hợp cao • MOSFET có 2 kiểu – Enhancement MOSFET (được sử dụng nhiều) – Depletion MOSFET – Chúng ta sẽ xem xét Enhancement MOSFET • Một tên khác của MOSFET là IGFET (Insulated-gate FET)...

23p tvq_pro 03-11-2012 468 108   Download

Since the first edition of this handbook, semiconductor technology has gone through a continued evolution of new devices and materials like never before. Wafer sizes continue to grow with most of the new fabs equipped for 12-inch wafers. The changes are triggered by many considerations: continued need to provide more functions at lower cost; technology features less than 1000 Å requiring new processes, and exponential increase in the number of device elements.

511p thix1minh 16-10-2012 74 14   Download

The advances in ultra-large-scale integration (ULSI) technology mainly have been based on downscaling of the minimum feature size of complementary metal-oxide semiconductor (CMOS) transistors. The limit of scaling is approaching and there are unsolved problems such as the number of electrons in the device’s active region. If this number is reduced to less than 10 electrons (or holes), quantum fluctuation errors will occur and the gate insulator thickness will become too small to block quantum mechanical tunneling, which may result in unacceptably large leakage currents....

0p chuyenphimbuon 21-07-2012 72 10   Download

Thông thường lớp cách điện được dùng là lớp oxit nên còn gọi là metal - oxide - semiconductor transistor (viết tắt là MOSFET).Transistor hiệu ứng trường (Field Effect Transistor - FET): JFET: Junction FET; MOSFET: Metal - Oxid Semiconductor FET (Insulated - Gate - IGFET) Tính chất (Phân biệt với BJT); Nhạy với điện áp; Trở kháng...

56p son2483 12-11-2010 1153 307   Download

Active-load resistors = điện trở tải (loại) tích cực Active-load switching = chuyển mạch tải tích cực CMOS = Complementary Metal-Oxide Semiconductor Metal Oxide CMOS inverter = cổng đảo CMOS Depletion-mode MOSFET = MOSFET chế độ nghèo = D-MOS Enhancement-mode MOSFET = MOSFET chế độ giàu = E-MOS Insulated-gate FET (IGFET) = FET cổng cách điện Metal-Oxide Semiconductor FET = MOSFET Passive-load Passive load switching = chuyển mạch tải thụ động Substrate = nền Threshold voltage = điện áp ngưỡng Uninterruptible Power Supply (UPS) = nguồn cấp điện liên tục ồ ấ Giới thiệu • MOSFET cũng có các c...

33p vankent 13-07-2010 102 25   Download

Giới thiệu: Transistor hiệu ứng trường (Field Effect Transistor - FET): JFET: Junction FET; MOSFET: Metal - Oxid Semiconductor FET (Insulated - Gate - IGFET) Tính chất (Phân biệt với BJT); Nhạy với điện áp; Trở kháng vào rất cao

13p doanhuan87 17-05-2010 842 245   Download

Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate Turn-Off Thyristors • Insulated Gate Bipolar Transistors • Gate-Commutated Thyristors and Other Hard-Driven GTOs • Comparison Testing of Switches © 2002 by CRC Press LLC .1 Power Electronics Kaushik Rajashekara Delphi Automotive Systems 1.

101p daohuongthon 22-01-2010 131 37   Download

Rajashekara, K., Bhat, A.K.S., Bose, B.K. “Power Electronics” The Electrical Engineering Handbook Ed. Richard C. Dorf Boca Raton: CRC Press LLC, 2000 .30 Power Electronics 30.1 Power Semiconductor Devices Thyristor and Triac • Gate Turn-Off Thyristor (GTO) • ReverseConducting Thyristor (RCT) and Asymmetrical Silicon- Controlled Rectifier (ASCR) • Power Transistor • Power MOSFET • Insulated-Gate Bipolar Transistor (IGBT) • MOS Controlled Thyristor (MCT) Kaushik Rajashekara Delphi Energy & Engine Management Systems 30.2 30.3 30.

44p longmontran 14-01-2010 149 20   Download