
Semiconductor
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The results in this case are compared with the case of the bulk semiconductors show the difference and the novelty of the results. The results numerically calculated for GaAs/AlGaAs in order to show the dependence of absorption coefficient on the photon energy of the temperature, the size of the asymmetric semi-parabolic quantum wells.
8p
viindranooyi
07-05-2022
3
1
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Bài viết trình bày phương pháp thiết kế một bộ khuếch đại tạp âm thấp công nghệ MMIC hoạt động ở tần số trung tâm 10 GHz ứng dụng cho rađa. Bóng bán dẫn sử dụng là transistor hiệu ứng trường NP2500MS với công nghệ 0.25 µm AlGaN/ GaN HEMT của hãng WIN Semiconductor, Đài Loan.
6p
vistephenhawking
26-04-2022
3
0
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Lecture Electronic materials - Chapter 11: How do they work? (postponing the math) provide students with knowledge about A p-n junction diode is made by forming a p-type region of material directly next to a n-type region.
10p
trollhunters
10-01-2022
3
0
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Lecture Electronic materials - Chapter 25: MOSFET basics provide students with nowledge about with our expression relating the Gate voltage to the surface potential and the fact that S=2F we can determine the value of the threshold voltage.
28p
trollhunters
10-01-2022
4
0
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Lecture ECE 6450 Microelectronic - Chapter 2: Semiconductor substrates. After studying this section will help you understandcertain compositions of materials are allowed at a given temperature and pressure when the material is in thermodynamic equilibrium. These compositions can be described by “Phase Diagrams”. These allowed compositions effect semiconductor growth, and dictate the stability and electrical properties of metalsemiconductor contacts.
14p
trollhunters
10-01-2022
1
0
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Lecture ECE 6450 Microelectronic - Chapter 4: Oxidation (applies to Si and SiC only). After studying this section will help you understand the ability to grow a high quality thermal oxide has propelled Si into the forefront of all semiconductor technology. Some present day efforts are being made to produce SiGe channel transistors to marry the benefits of Si (good oxides) with the speed of Ge.
19p
trollhunters
10-01-2022
1
0
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Porphyrins are an important family of organic chromophores that have attracted attention as photosensitizers in TiO2 -based dye-sensitized solar cells (DSSCs). This brief review is dedicated to comparative studies of phosphonic and carboxylic acid anchoring groups for attachment of porphyrin sensitizers on semiconductors or conductors surface. Here we have selected some representative examples of recently described phosphonate/carboxylate porphyrins with the aim to demonstrate that porphyrin phosphonate should be a promising anchoring group for such systems.
14p
langthannam
29-12-2021
1
0
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Novel unsymmetrical organic sensitizers having donor, π-spacer, and anchoring groups were designed and synthesized for dye-sensitized solar cell (DSSC) application. The dyes 3-{4-[7-(4-{bis[4-(hexyl)phenyl]amino} phenyl)-11,12-dibutoxy-1,4,5,8-tetrahydrodibenzo [a,c] phenazine-2-yl]phenyl}-2-cyano acrylic acid (KD-148) and 3-{5-[7-(4-{bis[4-(hexyloxy)phenyl]amino} phenyl)-11,12-dibutoxy-1,4,5,8-tetrahydrodibenzo [a,c] phenazine-2-yl]-2-thienyl}-2- cyano acrylic acid (KD-150) were anchored onto TiO2 and tested with ionic liquid electrolyte.
31p
langthannam
29-12-2021
1
0
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The use of multiwalled carbon nanotubes (CNTs) in sol-gel synthesized titanium dioxide (TiO2) photocatalysts as templates was systematically studied. CNTs have high oxidative thermal stability and the controlled removal of CNTs can be achieved at lower temperatures under air flow by the use of Na, Fe, and Co as a catalyst. These catalysts helped to reduce the oxidation temperature of CNTs; thus anatase phase was achieved without significant sintering.
15p
langthannam
29-12-2021
1
0
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The n-ZnO nanorods/p-Si heterostructures show good photocatalytic ability at high baking temperature. The concentration of Rhodamine B can be decreased up to 97% after 150 min treated by the n-ZnO nanorods/p-Si heterostructures grown at 80 oC. This result indicates that the n-ZnO nanorods/p-Si heterostructures are capable of being used in the decomposition of organic compounds.
6p
meyerowitz
25-12-2021
1
0
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The significantly enhanced photocatalytic activity was assigned to the combined synergy effects of the electron-reservoir of Ag and the highly absorptive r-GO with the visible-band gap WO3 semiconductors, which suggests a promising procedure to construct ternary nanocomposite-based high-performance photocatalysts under the solar light.
10p
meyerowitz
25-12-2021
2
0
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This is the first report on the optical and resistance properties of copper aluminum oxide thin films for applications as thermal infrared imagers. The deposition of these films was investigated under three series of reactive magnetron sputtering conditions.
7p
meyerowitz
25-12-2021
0
0
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The polarization-electric field (P-E) loops reveal the ferroelectric nature of the BZCT/ZnO composites. The energy storage properties of BZCT/ZnO composite ceramics as a function of different wt. % of ZnO are found to be optimum at 1 wt. % with a recoverable energy density of 2.61 J/cm3 and an efficiency of 74.2%, at an electric field of 282 kV/cm
8p
meyerowitz
25-12-2021
0
0
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In this report, Raman spectra of the Zn1−xMnxO samples annealed at various temperatures in different ambients, such as in air, in argon and in oxygen were studied. The results indicate that the Raman spectra of the samples are affected significantly by the annealing temperature and by the ambient. The most intensive peak in the Raman spectra at approximately 570 cm−1 has two components, one at around 570 cm−1 (A1(LO)) and the other at 580 cm−1 (E1(LO)). In contrast to previous results, with increasing annealing temperature, the intensity of 570 cm−1 peak still remains anomalously high.
7p
thienlangso
15-12-2021
2
0
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Bài giảng Kỹ thuật điện tử: Bài 5 - Lưu Đức Trung cung cấp cho học viên các kiến thức về transistor trường, đặc điểm của tụ MOS, Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Junction Field Effect Transistor (JFET), cấu trúc tụ MOS trên silic kiểu p,... Mời các bạn cùng tham khảo chi tiết nội dung bài giảng!
102p
bachkhinhdaluu
10-12-2021
8
1
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We prepared novel unsymmetrical A3B-type zinc and cobalt phthalocyanines bearing monocarboxylic acid groups on peripheral positions using statistical condensation method, especially designed to anchor on the TiO2 semiconductor surface. The novel complexes were anchored on TiO2 semiconductor to prepare effective dye sensitized photoactive composites as heterogeneous catalysts. The results indicated that modified TiO2 nanocrystals possessed only the anatase phase and MPc-TiO2 photocatalysts with loading amount of dye ca. 8.27 µmol/g TiO2 exhibit strong visible light absorption.
15p
tudichquannguyet
29-11-2021
0
0
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This study successfully synthesized two dimensions (2D)-structured g-C3N4 nanosheets by a simple thermal-exfoliation method with annealing route at 2 oC/min. Firstly, melamine was placed in a ceramic crucible with cover and then undergone the annealing route at 550 oC for 2 h to develop into the g-C3N4 bulk. Then the assynthesized g-C3N4 bulk was further annealed without the cover at 550 oC for 2 h to form the final product, g-C3N4 nanosheets.
9p
spiritedaway36
28-11-2021
0
0
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Turkey is the leading country in the world in terms of boron production and sale. Increasing boron production goes along with an increasing generation of boron wastes. The pollution of the soil and the air around the waste piles, as well as the occupation of several square kilometers of ground, are major environmental problems. It is, therefore, very important to make use of the wastes to both protect the environment and create revenue.
10p
tudichquannguyet
29-11-2021
1
0
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Graphitic carbon nitride (g-CN) has gained wide interest in many areas, such as energy and the environmental remediation as a layered polymeric semiconductor that allows the formation of catalytically active Schottky junctions due to its proper electronic band structure. Interestingly, although it is known that the precursors used in the synthesis, can influence the properties of the g-CN, no detailed study on these effects on Schottky junctions could be found in the literature.
13p
tudichquannguyet
29-11-2021
0
0
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Việc mở rộng quy mô của chất bán dẫn oxide metal bổ sung CMOS (Complementary Metal Oxide Semiconductor) đã dẫn đến lớp SiO2 (Silicon dioxide) được sử dụng làm điện môi cổng trở nên quá mỏng (~1.4 nm) làm cho dòng điện rò cổng quá lớn.
5p
visergeybrin
25-11-2021
4
0
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